| PART |
Description |
Maker |
| 35GQ150SCS |
35A 150V Hi-Rel Schottky Discrete Diode in a TO-254AA package
|
International Rectifier
|
| 35SCGJQ060 |
35A 60V Hi-Rel Schottky Common Cathode Diode in a D2-Pak package
|
International Rectifier
|
| SBT350-10L |
Schottky Barrier Diode (Twin Type 隆陇 Cathode Common) 100V, 35A Rectifier
Schottky Barrier Diode (Twin Type ・ Cathode Common) 100V, 35A Rectifier
|
Sanyo Semicon Device
|
| 15JGQ100 |
35A 100V Hi-Rel Schottky Common Anode Diode in a TO-254AA package DLA Number 1N7043CAT1
|
International Rectifier
|
| NTLJF3118N NTLJF3118NTAG NTLJF3118NTBG |
Power MOSFET and Schottky Diode 20 V, 4.6 A, uCool N-Channel, with 2.0 A Schottky Barrier Diode, 2x2 mm WDFN Package
|
ON Semiconductor
|
| BAT60A Q62702-A1188 |
Silicon Schottky Diode (Rectifier Schottky diode with extreme low VF drop for mobile communication For power supply 硅肖特基二极管（肖特基二极管整流极端VF为移动通信电源供应下降
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| NTHD4N02F NTHD4N02FT1G NTHD4N02FT1 NTHD4N02 |
Power MOSFET and Schottky Diode 20 V, 2.7A, N-Channel, w/1.0 A Schottky Barrier Diode, ChipFET™
|
ON Semiconductor
|
| HFB35HB20C |
200V 35A Hi-Rel Ultra-Fast Common Cathode Diode in a TO-254AA package
Ultrafast, Soft Recovery Diode
|
IRF[International Rectifier]
|
| HGTG10N120BND |
36 MACROCELL 3.3 VOLT ISP CPLD 35 A, 1200 V, N-CHANNEL IGBT, TO-247
35A/ 1200V/ NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| KDR411 |
Schottky Barrier Diode
SCHOTTKY BARRIER TYPE DIODE(LOW PWER RECTIFICATION, FOR SWITCHING POWER SUPPLY)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
KEC Holdings
|
